Local and Lattice Stress Measurement, Die level Topography. For in-die and in-device stress and composition control.
Micro Raman system for lattice level strain and material composition measurement. High spectral resolution (0.02 cm-1) and sub micron lateral resolution. Measurement of through silicon via (TSV) keep out zone, local stress and composition profiling. Fully automated C2C system.
Nano Topography and Stress of dies: 1nm vertical resolution in single images sized up to 30mm x 40mm. Fully automated cassette to cassette system.Semi-automated systems available as well.
Frontier Semiconductor moved to its new location: 165 Topaz St., Milpitas, CA 95035, USA.May 01, 2018
FSM will be presenting at Semicon West in San Francisco, Ca, July 10-12, 2018. Please visit us at booth #2332 in the South Hall.Jul 10, 2018
FSM will be presenting at SPIE Optics and Photonics Conference in San Diego.Aug 20, 2018
FSM will be presenting at SPIE The international society for optics and photonics - DEFENSE COMMERCIAL SENSINGApr 16, 2019