Local and Lattice Stress Measurement, Die level Topography. For in-die and in-device stress and composition control.
Micro Raman system for lattice level strain and material composition measurement. High spectral resolution (0.02 cm-1) and sub micron lateral resolution. Measurement of through silicon via (TSV) keep out zone, local stress and composition profiling. Fully automated C2C system.
FSM will be introducing the new FSM 8108 VITE system at the FCMN 2017 in Monterey. FSM 8108 VITE is based on the Frequency Space Moire Effect, which provides high speed, high accuracy dimensional metrology.
FSM will exhibit and present at 2017 MRS Spring Meeting. Booth number 504. Please visit.
FSM will exhibit and present at FCMN 2017. We will be introducing our latest metrology solutions for thinned wafer thickness measurement and other application. Talk to us also about our new high temperature vacuum characterization chamber with wafer rotation.