Virtual Interface Technology for 3D-IC Metrology: TSV profile (depth, top & bottom CD) , Remaining Silicon Thickness (RST), Copper Nail Height, Bump Height and Cu pillar Height, Edge trim profile.
New high speed, high accuracy non-contact characterization of thin wafers, through silicon vias (TSV), bumps, MEMS structures and novel materials. FSM 8108 VITE can be employed in the front-end and backend. It provides thickness, TTV, and topography of Si and compound materials, edge trim geometry, multilayer thickness and topography of wafers on tape, on sapphie,or on glass. Measurement of warp of highly warped wafers and measurement of thick films.
FSM will be introducing the new FSM 8108 VITE system at the FCMN 2017 in Monterey. FSM 8108 VITE is based on the Frequency Space Moire Effect, which provides high speed, high accuracy dimensional metrology.
FSM will exhibit and present at 2017 MRS Spring Meeting. Booth number 504. Please visit.
FSM will exhibit and present at FCMN 2017. We will be introducing our latest metrology solutions for thinned wafer thickness measurement and other application. Talk to us also about our new high temperature vacuum characterization chamber with wafer rotation.