Local and Lattice Stress Measurement, Die level Topography. For in-die and in-device stress and composition control.
Micro Raman system for lattice level strain and material composition measurement. High spectral resolution (0.02 cm-1) and sub micron lateral resolution. Measurement of through silicon via (TSV) keep out zone, local stress and composition profiling. Fully automated C2C system.
Nano Topography and Stress of dies: 1nm vertical resolution in single images sized up to 30mm x 40mm. Fully automated cassette to cassette system.Semi-automated systems available as well.
Frontier Semiconductor moved to its new location: 165 Topaz St., Milpitas, CA 95035, USA.May 01, 2018
FSM will be presenting at Semicon West in San Francisco, Ca, July 9-11, 2019. Please visit us at booth #243 in the South Hall.Jul 09, 2019
FSM will be presenting at SPIE Photonics West in San Francisco, Ca, February 2 -7, 2019.Feb 02, 2019