Frontier Semiconductor is the leading manufacturer of stress measurement tools for semiconductor, MEMS, optoelectronic, and flat panel applications. Stress and wafer bow maps can be acquired over the entire wafer surface, providing process engineers means to characterize and develop new processes using different thin film materials.

The FSM 128 Series systems are room temperature,  full-wafer 2D/3D stress mapping systems. 128 systems use FSM's patented non-contact Opti-Lever dual-laser auto-switching technology featuring a micropositioning detector to measure the laser beam deflection with high precision over a large dynamic range of small to large bow or stress. FSM's stress gauges have the ability to scan 1000 points per inch in seconds for high resolution, high precision stress mapping on blanked and patterned wafers.

In-Situ Roughness Monitoring of very rough surfaces such as those of diffusers for LED and Laser light sources, as well as silicon and compound semiconductor solar cells.

Stress Hysteresis Measurement up to 500C for thermal property and stability tests of thin films in inert gas. Non-Contact Laser Scanning Technology.

Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles. Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature. NEW: Optional wafer rotation offers unique 2D/3D mapping to study wafer deformation as a function of temperature.

Virtual Interface Technology for 3D-IC Metrology: TSV profile (depth, top & bottom CD) , Remaining Silicon Thickness (RST), Copper Nail Height, Bump Height and Cu pillar Height, Edge trim profile.

Contact and Non-Contact sheet resistance measurement systems for implantation, diffusion, metallization, and many other applications.

Film adhesion testing of thin films and stacks on substrates for material evaluation.

Substrate and tape total and individual thicknesses, warpage, and TTV Measurement. Able to measure with or without backing tape. For wafer back-grind and etch thinning processes control. Non-contact Echoprobe or VITE Technology. Thin film and surface roughness options.

Local and Lattice Stress Measurement, Die level Topography. For in-die and in-device stress and composition control.