Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles. Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature. NEW: Optional wafer rotation offers unique 2D/3D mapping to study wafer deformation as a function of temperature.
Rapid Thermal Mechanical Characterization of novel materials. Simulataneous extraction of stress hysteresis, thermal desorption, film shrinkage and reflectivity data during thermal cycling in vacuum up to 900 degree C. Manually loading system.
Frontier Semiconductor moved to its new location: 165 Topaz St., Milpitas, CA 95035, USA.May 01, 2018
FSM will be presenting at Semicon West in San Francisco, Ca, July 9-11, 2019. Please visit us at booth #243 in the South Hall.Jul 09, 2019
FSM will be presenting at SPIE Photonics West in San Francisco, Ca, February 2 -7, 2019.Feb 02, 2019