FSM uses patented Laser Scanning technology to measure the radius of curvature and bow of wafers. A laser beam is directed to the wafer. The beam is reflected at an angle that corresponds to the radius of curvature of the wafer.
Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles.
Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature.